Characterization of InSb quantum dots in InAs matrix grown by molecular beam epitaxy for infrared photodetectors
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InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers
Type II InSb/InAs quantum dots (QDs) were successfully grown on GaAs substrates using three different metamorphic buffer layer (MBL) designs. The structural properties of the resulting metamorphic InAs buffer layers were studied and compared using cross-sectional transmission electron microscopy and high resolution x-ray diffraction measurements. Photoluminescence (PL) originating from the InSb...
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